dmn2050l n-channel enhancement mode mosfet features ? low on-resistance ? 29m @v gs = 4.5v ? 50m @v gs = 2.5v ? 100m @v gs = 2.0v ? very low gate threshold voltage ? low input capacitance ? fast switching speed ? lead, halogen and antimony free, rohs compliant ? "green" device (notes 2, 3 and 6) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.008 grams (approximate) uc t new prod sot-23 top view e q uivalent circuit source gate drain d g s top view maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v drain current (note 1) i d 5.9 a pulsed drain current (note 4) i dm 21 a thermal characteristics characteristic symbol value units total power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient (note 1) r ja 90 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb, on 2oz copper pad layout with r ja = 90c/w. 2. no purposefully added lead. halogen and antimony free. 3. diodes inc.?s ?green? policy can be found on our webs ite at http://www.diodes.com /products/lead_free/index.php. 4. repetitive rating, pulse width limited by junction temperature. dmn2050l document number: ds31502 rev. 3 - 2 1 of 5 www.diodes.com october 2008 ? diodes incorporated
dmn2050l electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 12v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 0.45 ? 1.4 v v ds = v gs , i d = 250 a v gs = 4.5v, i d = 5.0a v gs = 2.5v, i d = 3.1a static drain-source on-resistance r ds (on) ? 24 42 68 29 50 100 m v gs = 2.0v, i d = 1.5a forward transfer admittance |y fs | ? 8 ? s v ds =5v, i d = 2.1a diode forward voltage (note 5) v sd ? 0.9 1.4 v v gs = 0v, i s = 2.0a dynamic characteristics input capacitance c iss ? 532 ? pf output capacitance c oss ? 144 ? pf reverse transfer capacitance c rss ? 117 ? pf v ds = 10v, v gs = 0v f = 1.0mhz gate resistance r g ? 1.3 ? v ds = 0v, v gs = 0v, f = 1.0mhz switching characteristics total gate charge q g ? 6.7 ? v ds = 10v, v gs = 4.5v, i d = 5.0a gate-source charge q gs ? 0.8 ? v ds = 10v, v gs = 4.5v, i d = 5.0a gate-drain charge q gd ? 3.0 ? nc v ds = 10v, v gs = 4.5v, i d = 5.0a new product notes: 5. short duration pulse test used to minimize self-heating effect. 6. product manufactured with green moldi ng compound and does not contain halogens or sb 2 o 3 fire retardants. 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 1.5v gs v = 2.0v gs v = 3.0v gs v = 4.5v gs v = 10v gs v = 2.5v gs 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds dmn2050l document number: ds31502 rev. 3 - 2 2 of 5 www.diodes.com october 2008 ? diodes incorporated
dmn2050l 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 04 81216 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance (m ) ds(on) 20 v = 4.5v gs v = 10v gs v = 2.5v gs 0 0.02 0.04 0.06 0481216 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature 20 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ai n -s o u r c e on-resistance (normalized) dson v = 4.5v i = 5a gs d v = 10v i = 10a gs d 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 fig. 6 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 4 8 12 16 20 fig. 7 diode forward voltage vs. current 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = 25c a 10 100 1,000 0 5 10 15 20 fig. 8 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) c iss c rss c oss new product dmn2050l document number: ds31502 rev. 3 - 2 3 of 5 www.diodes.com october 2008 ? diodes incorporated
dmn2050l 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 9 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * r r = 88c/w ? ja ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 new product ordering information (note 7) part number case packaging DMN2050L-7 sot-23 3000/tape & reel notes: 7. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf . marking information mn3 ym mn3 = marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions sot-23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm a m j l d f b c h k g k1 dmn2050l document number: ds31502 rev. 3 - 2 4 of 5 www.diodes.com october 2008 ? diodes incorporated
dmn2050l suggested pad layout x e y c z dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 new product important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. dmn2050l document number: ds31502 rev. 3 - 2 5 of 5 www.diodes.com october 2008 ? diodes incorporated
|
